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| ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Voltage Stabilizers DO-204AH (DO-35 Glass) Features * Silicon Stabilizer Diodes * Monolithic integrated analog circuits designed for small power stabilizer and limitation circuits, providing low dynamic resistance and high-quality stabilization performance as well as low noise. In the reverse direction, these devices show the behavior of forward-biased silicon diodes. * The end of the ZTE device marked with the cathode ring is to be connected: ZTE1.5 and ZTE2 to the negative pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the positive pole of the supply voltage. * These diodes are also available in MiniMELF case with the type designation LL1.5 ... LL 5.1. min. 1.083 (27.5) max. .150 (3.8) max. .079 (2.0) Cathode Mark min. 1.083 (27.5) Dimensions are in inches and (millimeters) Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging codes/options: D7/10K per 13" reel (52mm tape), 20K/box D8/10K per Ammo tape, (52mm tape), 20K/box max. .020 (0.52) Maximum Ratings Parameter (TA = 25C unless otherwise noted) Symbol Value Unit Operating Current (see Table "Characteristics") Inverse Current Power dissipation at Tamb = 25C Junction temperature Storage temperature range IF Ptot TJ TS 100 300(1) 150 - 55 to +150 mA mW C C Electrical and Thermal Characteristics Parameter Forward Voltage at IF = 10 mA Temperature Coefficient of the stabilized voltage at IZ = 5 mA ZTE1.5, ZTE2 ZTE2.4, ZTE5.1 (TA = 25C unless otherwise noted) Symbol VF Min. - - - - Typ. - -26 -34 - Max. 1.1 - - 400(1) Unit V 10 /C 10-4/C C/W -4 VZ VZ RJA Thermal resistance junction to ambient air Document Number 88425 02-May-02 www.vishay.com 1 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Type ZTE1.5 ZTE2 ZTE2.4 ZTE2.7 ZTE3 ZTE3.3 ZTE3.6 ZTE3.9 ZTE4.3 ZTE4.7 ZTE5.1 (TA = 25C unless otherwise noted) Operating Voltage at IZ = 5mA(2) VZ () 1.35 ... 1.55 2.0 ... 2.3 2.2 ... 2.56 2.5 ... 2.9 2.8 ... 3.2 3.1 ... 3.5 3.4 ... 3.8 3.7 ... 4.1 4.0 ... 4.6 4.4 ... 5.0 4.8 ... 5.4 Dynamic resistance at IZ = 5mA rzj () 13(<20) 18(<30) 14(<20) 15(<20) 15(<20) 16(<20) 16(<25) 17(<25) 17(<25) 18(<25) 18(<25) Permissable operating current at Tamb = 25C (1) IZ max. (mA) 120 120 120 105 95 90 80 75 65 60 55 Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case (2) Tested with pulses tp = 5ms www.vishay.com 2 Document Number 88425 02-May-02 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) ZTE1.5 ... 5.1 ZTE1.5 ZTE2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 ZTE1.5 ... 5.1x ZTE1.5 ZTE2 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 Document Number 88425 02-May-02 www.vishay.com 3 ZTE1.5 thru ZTE5.1 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) ZTE 1.5 ... 5.1 ZTE1.5 ... 5.1 ZTE 5.1 4.3 3.6 3 www.vishay.com 4 Document Number 88425 02-May-02 |
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